Infineon #FS75R12KT3 New Instock

Product Category: IGBT Modules
Manufacturer: Infineon
Product: IGBT Silicon Modules
Configuration: Hex
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.15 V
Continuous Collector Current at 25 C: 105 A
Gate-Emitter Leakage Current: 400 nA
Pd – Power Dissipation: 355 W
Package / Case: Econo 2
Maximum Operating Temperature: + 125 C
Brand: Infineon Technologies
Height: 17 mm
Length: 107.5 mm
Maximum Gate Emitter Voltage: +/- 20 V
Minimum Operating Temperature: – 40 C
Mounting Style: Screw
Factory Pack Quantity: 10
Width: 45 mm
IGBT Modules N-CH 1.2KV 105A

The Infineon IGBT module FS75R12KT3 is a N-channel IGBT (Insulated-Gate Bipolar Transistor) module with a maximum collector-emitter voltage of 1200V and a continuous collector current of 105A. It has a power dissipation of 355W and is packaged in an Econo 2 case. The module has a height of 17mm, a length of 107.5mm, and a width of 45mm, and it can be mounted using screws. It has a maximum operating temperature of +125°C and a minimum operating temperature of -40°C. The maximum gate-emitter voltage is +/- 20V and the factory pack quantity is 10.

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FS75R12KT3 FS75R12KT3

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