FUJI #7MBP200VEA120-50 New Instock


The 7MBP200VEA120-50 is an insulated-gate bipolar transistor (IGBT) module manufactured by Mitsubishi Electric. It has a collector-emitter voltage rating of 1200V and a collector current rating of 200A. The module is designed with a temperature protection mechanism that directly detects the junction temperature of the IGBTs, resulting in low power loss and soft switching. The built-in control circuit is optimized for high performance and reliability, and the module has an operating junction temperature of up to 150°C and a storage temperature range of -40°C to +125°C. The module has a collector power dissipation of 961W and a maximum gate-emitter voltage of ±20V. The recommended screw torque for mounting is 2.5-3.5 N·m, and the weight of the module is 980g.

• Temperature protection provided by directly detecting the junction temperature of the IGBTs
• Low power loss and soft switching
• High performance and high reliability IGBT with overheating protection
• Higher reliability because of a big decrease in number of parts in built-in control Circuit
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic:200A
Collector current Icp:400A
Collector power dissipation Pc:961W
Collector-Emitter voltage VCES:2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque2.5- 3.5 N·m
Weight 980g

YouTube : https://www.youtube.com/watch?v=aqlbyINcMp8
7MBP200VEA120-50 7MBP200VEA120-50

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