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The Fuji Electric igbt 6MBP50NA060 is high-reliability Insulated Gate Bipolar Transistor (IGBT).

6MBP50NA060 with maximum collector current of 50A and maximum collector-emitter voltage of 600V.

Its package style is flange mount and it has rectangular shape. The IGBT has complex configuration, 6MBP50NA060 has 6 elements and 22 terminals. This IGBT is made of silicon, the turn-off time of 3600ns and turn-on time of 300ns. It is N-channel type and maximum VCEsat is 2.9V .

The package body material is made of plastic/epoxy, operate at maximum temperature of 150°C.

Manufacturer Part Number: 6MBP50NA060

Package Description: FLANGE MOUNT, R-PUFM-X22

Manufacturer: Fuji Electric Co Ltd

Additional Feature: HIGH RELIABILITY

Collector Current-Max (IC): 50 A

Collector-Emitter Voltage-Max: 600 V

Configuration: COMPLEX

JESD-30 Code: R-PUFM-X22

Number of Elements: 6

Number of Terminals: 22

Operating Temperature-Max: 150 °C

Package Body Material: PLASTIC/EPOXY

Package Shape: RECTANGULAR

Package Style: FLANGE MOUNT

Polarity/Channel Type: N-CHANNEL

Subcategory: Insulated Gate BIP Transistors

Surface Mount: NO

Terminal Form: UNSPECIFIED

Terminal Position: UPPER

Transistor Element Material: SILICON

Turn-off Time-Nom (toff): 3600 ns

Turn-on Time-Nom (ton): 300 ns

VCEsat-Max: 2.9 V

Insulated Gate Bipolar Transistor 50A I(C) 600V V(BR)CES N-Channel