Fuji 6MBP50NA060 New Stock

Sell 6MBP50NA060, #Fuji #6MBP50NA060 New Stock, 6MBP50NA060 Insulated Gate Bipolar Transistor 50A I(C) 600V V(BR)CES N-Channel; 6MBP50NA060, #IGBT_Module, #IGBT, #6MBP50NA060
The Fuji Electric igbt 6MBP50NA060 is high-reliability Insulated Gate Bipolar Transistor (IGBT).
6MBP50NA060 with maximum collector current of 50A and maximum collector-emitter voltage of 600V.
Its package style is flange mount and it has rectangular shape. The IGBT has complex configuration, 6MBP50NA060 has 6 elements and 22 terminals. This IGBT is made of silicon, the turn-off time of 3600ns and turn-on time of 300ns. It is N-channel type and maximum VCEsat is 2.9V .
The package body material is made of plastic/epoxy, operate at maximum temperature of 150°C.
Manufacturer Part Number: 6MBP50NA060
Package Description: FLANGE MOUNT, R-PUFM-X22
Manufacturer: Fuji Electric Co Ltd
Additional Feature: HIGH RELIABILITY
Collector Current-Max (IC): 50 A
Collector-Emitter Voltage-Max: 600 V
Configuration: COMPLEX
JESD-30 Code: R-PUFM-X22
Number of Elements: 6
Number of Terminals: 22
Operating Temperature-Max: 150 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Polarity/Channel Type: N-CHANNEL
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Transistor Element Material: SILICON
Turn-off Time-Nom (toff): 3600 ns
Turn-on Time-Nom (ton): 300 ns
VCEsat-Max: 2.9 V
Insulated Gate Bipolar Transistor 50A I(C) 600V V(BR)CES N-Channel
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