Infineon #FP26R12W2T4_B11 New Instock


Typical Applications
• Auxiliary inverters
• Air conditioning
Motor drives
Electrical Features
• Low switching losses
• Low VCEsat
• Trench IGBT4
• VCEsat with positive temperature coefficient
• Al2O3 substrate with low thermal resistance
• Compact design
• Solder contact technology
• Rugged mounting due to integrated mounting clamps
• Pre-appliedThermalInterfaceMaterial
.Absolute maximum ratings (Tc=25°C unless without specified)
Kollektor-Emitter-Sperrspannung Collector-emitter voltage Tvj = 25°C VCES 1200 V
Kollektor-Dauergleichstrom Continuous DC collectorcurrent TH = 90°C, Tvj max = 175°C IC nom 25 A
Periodischer Kollektor-Spitzenstrom Repetitive peak collector current tP = 1 ms ICRM 50 A
Gate-Emitter-Spitzenspannung Gate-emitter peak voltage VGES +/-20 V
Temperaturim Schaltbetrieb Temperature under switching conditions Tvj op -40~150 °C

The Infineon FP26R12W2T4_B11 is a high voltage insulated gate bipolar transistor (IGBT) module designed for use in high power switching applications. It is a complete IGBT module that includes the IGBT transistor, a freewheeling diode, and other necessary components such as gate drive, protection, and snubber circuits.

The module has a maximum voltage rating of 1200V and a maximum current rating of 26A. It is designed to handle high current loads with minimal power loss, making it suitable for use in a wide range of applications, such as motor drives, welding equipment, and inverters. The module is equipped with a built-in freewheeling diode to reduce switching losses and improve the overall efficiency of the circuit.

YouTube :
FP26R12W2T4_B11 FP26R12W2T4_B11

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