Infineon #FF200R12MT4 New Instock


This is the specification for the Infineon FF200R12MT4 IGBT module. The module has an absolute maximum rating of 1200V for the Collector-Emitter voltage (VCES) and a continuous DC collector current of 200A. The repetitive peak collector current (ICRM) is 400A and the total power dissipation (Ptot) is 1100W. The gate-emitter peak voltage (VGES) is +/-20V and the operating temperature under switching conditions (Tvj) is between -40 to 150°C. The weight of the module is 340g.

Infineon #FF200R12MT4
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Kollektor-Emitter-Sperrspannung Collector-emitter voltage Tvj = 25°C,VCES 1200 V
Kollektor-Dauergleichstrom Continuous DC collector current 200A
Periodischer Kollektor-Spitzenstrom Repetitive peak collector currentt ICRM 400A
Gesamt-Verlustleistung Total power dissipation Ptot 1100 W
Gate-Emitter-Spitzenspannung Gate-emitter peak voltage VGES +/-20V
Temperatur in Schaltbetrieb Temperature under switching conditions Tvj op-40~150°C

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FF200R12MT4 FF200R12MT4

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