Toshiba MG100J7CSAOA New Stock

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TOSHIBA GTR Module Silicon N Channel IGB T MG100J7CSAOA High Power Switching Appl ications Motor Control Applications MG100J7CSAOA Unit: mm
. The electrodes ar e isolated from case.
. High input impe dance
. 7 IGBTs built into 1 package.
. Enhancement-mode
. High speed type IGB T :
:VCE (sat) = 2.5 V(max) (@IC = 100 A)
: tf = 0.5 µs (max) (@IC = 100 A)
: trr = 0.3 µs (max) (@IF = 100 A)
Equ ivalent Circuit JEDEC JEITA TOSHIBA We ight: 520g (typ.)
Inverter Stage Maximum Rati ngs (Ta = 25°C)
Characteristics Coll ector-emitter voltage Gate-emitter vol tage Collector curre .
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:600V
Gate-Emitter voltage VGES:±20V
Collector current DC, Ic : 100A
Collector current 1ms Tcp 200A
Collector Power Dissipation TC=25 °C PC 300W
Isolation Voltage AC :1 min Visol :2500V
junction temperature Tj:+150°C
Storage temperature Range Tstg :-40 to +125°C
screw torque 3/3 N·m
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