Infineon FP50R12W2T7_B11 New Stock

Sell FP50R12W2T7_B11, #Infineon #FP50R12W2T7_B11 New Stock, 6Page – Infineon Technologies IGBT Module VCES=1200V ICnom=50A ICRM=100A, #IGBT_Module, #IGBT, #FP50R12W2T7_B11
Potential Applications
. Auxiliary inverters
. Air conditioning
. Motor drivers
Electrical Features
. Low VCEsat
. Trenchstop TM IGBT
. Overload operation up to 175°C
Mechanical Features
. 2.5kV AC 1 min insulation
. A1203 substrate with low thermal resistance
. High power density
. Compact design
. Press FIT contact technology
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Kollektor-Emitter-Sperrspannung Collector-emitter voltage Tvj = 25°C VCES 1200 V
Kollektor-Dauergleichstrom Continuous DC collector current TC = 100°C, Tvj max = 175°C IC nom 50 A
Periodischer Kollektor-Spitzenstrom Repetitive peak collector current tP = 1 ms ICRM 100 A
Gesamt-Verlustleistung Total power dissipation TC = 25°C, Tvj max = 175°C Ptot 910 W
Gate-Emitter-Spitzenspannung Gate-emitter peak voltage VGES:±20V
Temperatur in Schaltbetrieb Temperature under switching conditions Tvj op-40~150°C
Gewicht Weight 39g
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