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Description: Infineon IGBT MOD™ Modules are designed for use in high frequency applications; 30 kHz for hard switching applications and 60 to 70 kHz for soft switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

Features:

.Low ESW(off)

.Discrete Super-Fast Recovery Free-Wheel Diode

.Isolated Baseplate for Easy Heat Sinking

Applications:

.Power Supplies

.Induction Heating

.Welders

Absolute Maximum Ratings, Tj = 25°C unless otherwise specified

Collector-Emitter Voltage (VGE = 0V) VCES 1200 Volts

Gate-Emitter Voltage (VCE = 0V) VGES ±20 Volts

Collector Current (DC, TC = 125°C)*2,*4 IC 400 Amperes

Collector Current (Pulse, Repetitive)*3 ICRM 800 Amperes

Total Power Dissipation (TC = 25°C)*2,*4 Ptot 2450 Watts

Emitter Current*2IE*11000 Amperes

Emitter Current (Pulse, Repetitive)*3 IERM*800 Amperes

Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) Visol 2500 Volts

Maximum Junction Temperature Tj(max) 175 °C

Maximum Case Temperature TC (max) 125 °C

Operating Junction Temperature Tj(op) -40 to +150 °C

Storage Temperature Tstg -40 to +125 °C