Fuji 1MBI600U4B-120 New Stock

Sell 1MBI600U4B-120, #Fuji #1MBI600U4B-120 New Stock, 1MBI600U4B-120 Insulated Gate Bipolar Transistor 800A I(C) 1200V V(BR)CES N-Channel MODULE-4; 1MBI600U4B-120, #IGBT_Module, #IGBT, #1MBI600U4B_120
The 1MBI600U4B-120 is high-performance MODULE-4 package Insulated Gate Bipolar Transistor (IGBT) from Fuji Electric(Japan).
This N-CHANNEL device has Collector Current-Max (IC) 800A and Collector-Emitter Voltage-Max 1200V, The 1MBI600U4B-120 was designed for high-power applications.
The package is FLANGE MOUNT with RECTANGULAR shape and is designed for an ISOLATED Case Connection. This igbt device is SINGLE WITH BUILT-IN DIODE configuration , has 320 ns Turn-on Time-Nom (ton) and 410 ns Turn-off Time-Nom (toff) .
The 4-pin package has an upper Terminal Position, it made from SILICON Transistor Element Material.
1MBI600U4B-120 can operate in temperatures up to 150°C.
Manufacturer Part Number: 1MBI600U4B-120
Part Package Code: MODULE
Package Description: FLANGE MOUNT, R-XUFM-X4
Pin Count: 4
Manufacturer: Fuji Electric Co Ltd
Case Connection: ISOLATED
Collector Current-Max (IC): 800 A
Collector-Emitter Voltage-Max: 1200 V
JESD-30 Code: R-XUFM-X4
Number of Elements: 1
Number of Terminals: 4
Operating Temperature-Max: 150 °C
Package Body Material: UNSPECIFIED
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Polarity/Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Transistor Element Material: SILICON
Turn-off Time-Nom (toff): 410 ns
Turn-on Time-Nom (ton): 320 ns
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