Fuji 2MBI200NB-120 New Stock

Sell 2MBI200NB-120, #Fuji #2MBI200NB-120 New Stock, 2MBI200NB-120 2-Pack IGBT: 200A/1200V 2 in one-package; 2MBI200NB-120, #IGBT_Module, #IGBT, #2MBI200NB_120
Fuji 2MBI200NB-120 is a power module designed for use in high power switching applications. It is part of the IGBT (Insulated Gate Bipolar Transistor) module family of Fuji, which combines the high-speed switching performance of a MOSFET with the high current handling capabilities of a bipolar transistor.
2MBI200NB-120 module features two IGBT chips connected in a half-bridge configuration, allowing it to handle up to 200A current & 1200V voltage. The module includes built-in protection features such as short-circuit protection & temperature sensing, which help to ensure safe and reliable operation.
This power module is commonly used in motor drives, UPS (Uninterruptible Power Supply) systems, welding equipment, & renewable energy systems.
Fuji 2MBI200NB-120 2-Pack IGBT Module,
• Square RBSOA
• Low Saturation Voltage
• Less Total Power Dissipation
• Improved FWD Characteristic
• Minimized Internal Stray Inductance
• Overcurrent Limiting Function (4~5 Times Rated Current)
• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power Supply
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic:200A
Collector current Icp:400A
Collector power dissipation Pc:1500W
Collector-Emitter voltage VCES:2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.5 *1 N·m
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