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Mitsubishi PM50CL1A120 is a power module designed by Mitsubishi Electric, a leading global electronics company based in Japan. The PM50CL1A120 is part of Mitsubishi’s PM series, designed to provide high power density & high efficiency in a compact package.

The #PM50CL1A120 module is a single IGBT (Insulated Gate Bipolar Transistor) module that can handle a maximum voltage of 1.2kV and a maximum current of 50A. It has a built-in diode for freewheeling operation, which allows for efficient switching of high power loads.

PM50CL1A120 has a low on-state voltage drop, helps to reduce power losses & improve efficiency.

PM50CL1A120 FEATURE

Inverter + Drive & Protection IC

a) Adopting new 5th generation Full-Gate CSTBTTM chip

b) The over-temperature protection which detects the chip surface temperature of CSTBTTM is adopted.

c) Error output signal is possible from all each protection upper and lower arm of IPM.

d) Compatible L-series package.

• 3φ 50A, 1200V Current-sense and temperature sense

IGBT type inverter

• Monolithic gate drive & protection logic

• Detection, protection & status indication circuits for, shortcircuit, over-temperature & under-voltage (P-FO available

from upper arm devices)

Collector-Emitter Voltage VD = 15V, VCIN = 15V VCES 1200V

Collector Current TC = 25°C (Note-1) ±IC 50A

Collector Current (Peak) TC = 25°C ±ICP 100A

Collector Dissipation TC = 25°C (Note-1) PC 462W

Junction Temperature Tj -40 to +125°C

Isolation Voltage 60Hz, Sinusoidal, Charged part to Base, AC 1 min Viso 2500V