Infineon #FZ3600R17KE3_S1 New Instock

FZ3600R17KE3_S1 FZ3600R17KE3_S1 FZ3600R17KE3_S1 FZ3600R17KE3_S1 FZ3600R17KE3_S1

The Infineon #FZ3600R17KE3_S1 is an IGBT (Insulated Gate Bipolar Transistor) module with a maximum collector-emitter voltage of 1700V and a maximum gate-emitter voltage of ±20V. The module has a collector current of 3600A and a maximum power dissipation of 18000W. The operating junction temperature is rated up to 150°C and the storage temperature is -40 to +125°C. The module weighs 2300 g and comes with a mounting screw torque of 3.5 *1 N·m. The IGBT module is designed for applications requiring high voltage and high current capabilities.

 Infineon #FZ3600R17KE3_S1
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1700V
Gate-Emitter voltage VGES:±20V
Collector current Ic:3600A
Collector current Icp:7200A
Collector power dissipation Pc:18000W
Collector-Emitter voltage VCES:2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.5 *1 N·m
Weight 2300 g
IGBT MODULE (V series)1700V / 3600A / 2 in one package

YouTube :
FZ3600R17KE3_S1 FZ3600R17KE3_S1

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