The Infineon #FZ3600R17KE3_S1 is an IGBT (Insulated Gate Bipolar Transistor) module with a maximum collector-emitter voltage of 1700V and a maximum gate-emitter voltage of ±20V. The module has a collector current of 3600A and a maximum power dissipation of 18000W. The operating junction temperature is rated up to 150°C and the storage temperature is -40 to +125°C. The module weighs 2300 g and comes with a mounting screw torque of 3.5 *1 N·m. The IGBT module is designed for applications requiring high voltage and high current capabilities.