Fuji #7MBP75RA120-50 New Instock
The 7MBP75RA120-50 is an IGBT (Insulated-Gate Bipolar Transistor) with a collector-emitter voltage rating of 1200V and a collector current DC rating of 75A. It features temperature protection provided by direct detection of the junction temperature, low power loss and soft switching, and high performance and reliability with overheating protection. The device is compatible with existing IPM-N series packages and has a higher reliability due to a decrease in the number of parts in the built-in control circuit. The device has an absolute maximum junction temperature of 150°C and a storage temperature range of -20°C to 125°C. The recommended screw torque for mounting is 3.5 * 6 N.m.
Features
· Temperature protection provided by directly detecting the junction
temperature of the IGBTs
· Low power loss and soft switching
· Compatible with existing IPM-N series packages
· High performance and high reliability IGBT with overheating protection
· Higher reliability because of a big decrease in number of parts in
built-in control circuit
Maximum ratings and characteristics
Absolute maximum ratings(at Tc=25°C unless otherwise specified)
Collector-Emitter voltage VCES 1200V
Collector current DC Ic 75A
Collector current 1ms Icp 150A
Collector power dissipation One transistor Pc 500W
Junction temperature Tj 150°C
Storage temperature Tstg -20~125°C
Screw torque Mounting (M5) 3.5*6 N.m
YouTube : https://www.youtube.com/watch?v=JUQetW3riJk
7MBP75RA120-50 7MBP75RA120-50