• Temperature protection provided by directly detecting the junction temperature of the IGBTs
• Low power loss and soft switching
• Compatible with existing IPM-N series packages
• High performance and high reliability IGBT with overheating protection
• Higher reliability because of a big decrease in number of parts in built-in control Circuit,Maximum ratings and characteristics.
Absolute maximum ratings (Tc=25°C unless without specified), Collector-Emitter voltage Vces:1200V,Gate-Emitter voltage VGES:±20V, Collector current Ic:50A, Collector current Icp:100A, Collector power dissipation Pc:255W, Collector-Emitter voltage VCES:2500V, Operating junction temperature Tj:+150°C, Storage temperature Tstg :-40 to +125°C, Mounting screw torque1.7N·m