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Description:

power transistor module manufactured by Toshiba. It is designed for use in high-frequency switching applications, such as power supplies, inverters, and motor drives. The module features a N-channel IGBT (Insulated Gate Bipolar Transistor) and a free-wheeling diode in a half-bridge configuration. The device has a collector-emitter voltage (Vce) rating of 600 volts and a continuous collector current (Ic) rating of 100 amps. The package used for MG100J2YS50 is the industry-standard 1-package (F-series).