The 7MBP200VEA120-50 is an insulated-gate bipolar transistor (IGBT) module manufactured by Mitsubishi Electric. It has a collector-emitter voltage rating of 1200V and a collector current rating of 200A. The module is designed with a temperature protection mechanism that directly detects the junction temperature of the IGBTs, resulting in low power loss and soft switching. The built-in control circuit is optimized for high performance and reliability, and the module has an operating junction temperature of up to 150°C and a storage temperature range of -40°C to +125°C. The module has a collector power dissipation of 961W and a maximum gate-emitter voltage of ±20V. The recommended screw torque for mounting is 2.5-3.5 N·m, and the weight of the module is 980g.