Toshiba #MG50Q6ES40 New Instock

    MG50Q6ES40 Description
MG50Q6ES40 could be used in High Power Switching / Motor Control Applications
. The Elect rodes are Isolated from Case.
. 6 IGBTS are Built Into 1 Package.
. Enhancement-Mode
. Low Saturation Voltage
: VCE(sat)=4.0V(Max)
. High Speed   : tf=0.5us(Max.)
· Low VCE(sat)
· Compact package
· P.C. board mount
· Converter diode bridge, Dynamic brake circuit
· Inverter for motor drive
· AC and DC servo drive amplifier
· Uninterruptible power supply
Maximum ratings (Ta=25°C)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic:50A
Collector current Icp:100A
Collector power dissipation Pc:250W
Collector-Emitter voltage VCES:2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 2/3 N·m

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MG50Q6ES40 MG50Q6ES40

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