Mitsubishi #PM75CL1A120  FEATURE
Inverter + Drive & Protection IC
a) Adopting new 5th generation Full-Gate CSTBT(TM) chip
b) The over-temperature protection which detects the chip sur-face temperature of CSTBT(TM) is adopted.
c) Error output signal is possible from all each protection up-per and lower arm of IPM.
d) Compatible L-series package.
• 3φ 75A, 1200V Current-sense and temperature sense IGBT type inverter
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for, short-circuit, over-temperature & under-voltage (P-FO available
from upper arm devices)
• UL Recognized
Maximum ratings and characteristics
• Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic:75A
Collector current Icp:150A
Collector power dissipation Pc:595W
Collector-Emitter voltage VCES:2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting M5 screw torque 2.5~3.5 N·m
Weight Typical value 380g