Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:600V
Gate-Emitter voltage VGES:±20V
Collector current Ic:150A
Collector current Icp:300A
Collector power dissipation Pc:430W
Collector-Emitter voltage VCES:2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting M5 screw torque 2.5~3.5 N·m
Weight Typical value 350g

The MITSUBISHI CM150RL-12NF is a IGBT module manufactured by Mitsubishi Electric. The part number CM150RL-12NF refers to a module that contains a single IGBT transistor and a fast recovery diode. The IGBT has a voltage rating of 1200V and a continuous current rating of 150A. It is commonly used in high power switching applications such as inverters, motor drives and power supplies. It is also a high-performance power semiconductor device that combines the advantages of a bipolar transistor (high voltage and current capability) with those of a MOSFET (fast switching speed and low conduction loss).