Infineon FS150R12KT4 New Stock
Sell FS150R12KT4, #Infineon #FS150R12KT4 New Stock, Econo PACK™ 3 module with trench / field stop IGBT 4 and emitter controlled 4 diode 150A/1200V/IGBT/6U, #IGBT_Module, #IGBT, #FS150R12KT4
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Infineon FS150R12KT4 igbt module is part of the EconoPACK™ 3 series and contains trench/field stop IGBT 4, and emitter controlled 4 diode.
The FS150R12KT4 has maximum collector-emitter 1200V voltage. Continuous DC collector current of 150A at maximum junction temperature of 175°C, and repetitive peak collector 300A current for pulse duration of 1ms.
This IGBT module can dissipate a maximum 750W power at the case temperature of 25°C. The gate-emitter peak voltage is ±20V, it can operate within a temperature range of -40°C to 150°C under switching conditions.
Maximum ratings and characteristics:
Absolute maximum ratings (Tc=25°C unless specified otherwise):
Collector-emitter voltage at Tvj = 25°C: VCES 1200 V
Continuous DC collector current at TC = 100°C,
Tvj max = 175°C: IC nom 150 A
Repetitive peak collector current for tP = 1 ms: ICRM 300 A
Total power dissipation at TC = 25°C,
Tvj max = 175°C: Ptot 750 W
Gate-emitter peak voltage: VGES ±20V
Temperature under switching conditions: Tvj op-40150°C
Mounting M5 screw torque: 36 N·m