#BSM100GB120DN2K
Manufacturer: Infineon
Product Category: IGBT Modules
RoHS: No
Brand: Infineon Technologies
Product: IGBT Silicon Modules
Configuration: Half Bridge
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.5 V
Continuous Collector Current at 25 C: 145 A
Gate-Emitter Leakage Current: 400 nA
Pd – Power Dissipation: 700 W
Package / Case: Half Bridge1
Maximum Operating Temperature: + 150 C
Maximum Gate Emitter Voltage: 20 V
Minimum Operating Temperature: – 40 C
Mounting Style: Screw
Factory Pack Quantity: 10
100A/1200V/IGBT/2U; IGBT Modules 1200V 100A DUAL