Product Category:    IGBT Modules  FF200R12KS4
Manufacturer:    Infineon
RoHS:    YES
Product:    IGBT Silicon Modules
Configuration:    Dual
Collector- Emitter Voltage VCEO Max:    1200 V
Collector-Emitter Saturation Voltage:    3.2 V
Continuous Collector Current at 25 C:    275 A
Gate-Emitter Leakage Current:    400 nA
Pd – Power Dissipation:    1.4 kW
Package / Case:    62 mm
Maximum Operating Temperature:    + 125 C
Brand:    Infineon Technologies
Height:    30.5 mm
Length:    106.4 mm
Maximum Gate Emitter Voltage:    +/- 20 V
Minimum Operating Temperature:    – 40 C
Mounting Style:    Screw
Factory Pack Quantity:    1
FF200R12KS4
IGBT Modules 1200V 200A DUAL