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The 1MBI600U4B-120 is high-performance MODULE-4 package Insulated Gate Bipolar Transistor (IGBT) from Fuji Electric(Japan).

This N-CHANNEL device has Collector Current-Max (IC) 800A and Collector-Emitter Voltage-Max 1200V, The 1MBI600U4B-120 was designed for high-power applications.

The package is FLANGE MOUNT with RECTANGULAR shape and is designed for an ISOLATED Case Connection. This igbt device is SINGLE WITH BUILT-IN DIODE configuration , has 320 ns Turn-on Time-Nom (ton) and 410 ns Turn-off Time-Nom (toff) .

The 4-pin package has an upper Terminal Position, it made from SILICON Transistor Element Material.

1MBI600U4B-120 can operate in temperatures up to 150°C.

Manufacturer Part Number: 1MBI600U4B-120

Part Package Code: MODULE

Package Description: FLANGE MOUNT, R-XUFM-X4

Pin Count: 4

Manufacturer: Fuji Electric Co Ltd

Case Connection: ISOLATED

Collector Current-Max (IC): 800 A

Collector-Emitter Voltage-Max: 1200 V

Configuration: SINGLE WITH BUILT-IN DIODE

JESD-30 Code: R-XUFM-X4

Number of Elements: 1

Number of Terminals: 4

Operating Temperature-Max: 150 °C

Package Body Material: UNSPECIFIED

Package Shape: RECTANGULAR

Package Style: FLANGE MOUNT

Polarity/Channel Type: N-CHANNEL

Surface Mount: NO

Terminal Form: UNSPECIFIED

Terminal Position: UPPER

Transistor Element Material: SILICON

Turn-off Time-Nom (toff): 410 ns

Turn-on Time-Nom (ton): 320 ns