Toshiba #MG75Q2YS42 Description
MG75Q2YS42 N CHANNEL IGBT (HIGH POWER SWITCHING; MOTOR CONTROL APPLICATIONS); 75 Amp; 1200 Volt; GTR module; IGBT. Motor Control Application.
MG75Q2YS42  0.53 lbs
* High speed and low saturation voltage.
* low noise due to built-in free-wheeling  diode – ultra soft fast recovery diode(USFD).
* Isolated head sink (terminal to base).
ABSOLUTE MAXIMUM RATINGS (Tc=25°C )
Collector Emitter Voltage VCES 1,200V
Gate Emitter Voltage VGES  ±20V
Collector Current DC IC 75A
Collector Current DC ICp 150A
Collector Power Dissipation Pc 560W
Junction Temperature Tj -40 ~ 150°C
Storage Temperature Tstg -40 ~125°C
Isolation Voltage VISO 2,500 VRMS(AC 1 minute)
Screw Torque Terminals 3/3 N.m
IGBT (HIGH POWER SWITCHING; MOTOR CONTROL APPLICATIONS) 75 Amp; 1200 Volt; GTR module; IGBT. Motor Control Application.