Toshiba MG50J6ES50 Description
High Power Switching Applications Motor Control Applications
. The electrodes are isolated from case.
. High input impedance.
. 6 IGBTs built into 1 package.
. Enhancement-mode.
. High speed : tf = 0.30µs (Max.) (IC = 50A)
trr = 0.15µs (Max.) (IF = 50A)
. Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC = 50A)
Collector-emitter voltage VCES 600 V
Gate-emitter voltage VGES ±20 V
Collector current DC IC 50 A
Collector current 1ms ICP 100 A
Forward current DC IF 50 A
Forward current 1ms IFM 100 A
Collector power dissipation (Tc = 25°C) PC 280 W
Junction temperature Tj 150 °C
Storage temperature range Tstg −40 ~ 125 °C
Isolation voltage VIsol  2500(AC 1 min.) V
Screw torque (Terminal / mounting) ― 2 / 3 N·m
High Power Switching Applications Motor Control Applications 50A/600V/IGBT/6U