#SEMiX353GB126V1 Features*
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short Circuit capability
• Press-fit pins as auxiliary contacts
• Thermally optimized ceramic
Typical Applications
• AC inverter drives
• UPS
• Renewable energy systems
Remarks
• Product reliability results are valid for Tj=150°C
• Visol between temperature sensor and power section is only 2500V
• For storage and case temperature with TIM see document “TP(*) SEMiX 3p”
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic:500A
Collector current Icp:1000A
Collector power dissipation Pc:3900W
Collector-Emitter voltage VCES:4000V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.5 *1 N·m
Weight 350g