Manufacturer:Infineon
Product Category:IGBT Modules
RoHS: Details
Product:IGBT Silicon Modules
Configuration:Dual
Collector- Emitter Voltage VCEO Max:1700 V
Collector-Emitter Saturation Voltage:2.45 V
Continuous Collector Current at 25 C:1070 A
Gate-Emitter Leakage Current:400 nA
Pd – Power Dissipation:3150 W
Package / Case:62 mm
Minimum Operating Temperature:- 40 C
Maximum Operating Temperature:+ 125 C
Packaging:Tray
Height:36.5 mm
Length:106.4 mm
Technology:Si
Width:61.4 mm
Brand:Infineon Technologies
Mounting Style:Chassis Mount
Maximum Gate Emitter Voltage:20 V
IGBT Modules N-CH 1.7KV 1.07KA