The Infineon FS150R12KT3 is a power module that is designed for use in power electronics applications. It is part of Infineon’s family of CoolSiC MOSFET products, which are optimized for use in high-voltage, high-frequency power conversion systems. The FS150R12KT3 specifically is a module with a rated voltage of 1200V and a maximum current rating of 150A. It features CoolSiC MOSFET technology, which offers a combination of high efficiency, fast switching speed, and low losses, making it well-suited for use in high-performance power electronics applications. The specific specifications, ratings, and characteristics of the FS150R12KT3 may vary depending on the application and the system it is used in, so it is important to consult the datasheet or the manufacturer for more detailed information.

Product Category: IGBT Modules
Manufacturer: Infineon
Product: IGBT Silicon Modules
Configuration: Hex
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.15 V
Continuous Collector Current at 25 C: 200 A
Gate-Emitter Leakage Current: 400 nA
Pd – Power Dissipation: 700 W
Package / Case: Econo 3
Maximum Operating Temperature: + 125 C
Brand: Infineon Technologies
Height: 17 mm
Length: 122 mm
Maximum Gate Emitter Voltage: +/- 20 V
Minimum Operating Temperature: – 40 C
Mounting Style: Screw
Factory Pack Quantity: 10
Width: 62 mm