#FP75R12KT3
Manufacturer: Infineon
Product Category: IGBT Modules
Product: IGBT Silicon Modules
Configuration: Hex
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.15 V
Continuous Collector Current at 25 C: 105 A
Gate-Emitter Leakage Current: 400 nA
Maximum Operating Temperature: + 125 C
Package / Case: Econo 3
Packaging: Tray
Brand: Infineon Technologies
Maximum Gate Emitter Voltage: +/- 20 V
Minimum Operating Temperature: – 40 C
Mounting Style: Screw
Pd – Power Dissipation: 355 W
Factory Pack Quantity: 10
IGBT Modules N-CH 1.2KV 105A FP75R12KT3