Part: #FF450R12KE4
Manufacturer: Infineon
Product Category: IGBT Modules
Product: IGBT Silicon Modules
Configuration: Triple Common Emitter Common Gate
Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C VCES 1200 V
Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent TC = 25°C, Tvj = 175°C IC nom 450A
PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent tP = 1 ms ICRM 900 A
Gesamt-Verlustleistung Totalpowerdissipation TC = 25°C, Tvj = 175°C Ptot 2400 W
Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage VGES +/-20 V
IGBT Modules FF450R12KE4 Infineon 1200V,520A