Features
IGBT3 and Emitter Controlled High Efficiency diode 1200V 300A
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Kollektor-Emitter-Sperrspannung Collector-emitter voltage Tvj = 25°C VCES 1200 V
Kollektor-Dauergleichstrom Continuous DC collector current TC = 25°C, Tvj max = 175°C IC nom 300A
PeriodischerKollektor-Spitzenstrom Repetitive peak collector current tP = 1 ms ICRM 600 A
Gesamt-Verlustleistung Total power dissipation TC = 25°C, Tvj max = 175°C Ptot 1450 W
Gate-Emitter-Spitzenspannung Gate-emitter peak voltage VGES ±20 V
Temperatur in Schaltbetrieb Temperature under switching conditions Tvj op -40~150 °C
Lagertemperatur Storage temperature Tstg -40~125 °C
Gewicht Weight 340 g