#BSM75GD120DN2 Manufacturer: Infineon
Product Category: IGBT Modules
RoHS: YES
Brand: Infineon Technologies
Product: IGBT Silicon Modules
Configuration: Hex
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.5 V
Continuous Collector Current at 25 C: 103 A
Gate-Emitter Leakage Current: 320 nA
Maximum Operating Temperature: + 150 C
Package / Case: EconoPACK 3A
Maximum Gate Emitter Voltage: 20 V
Minimum Operating Temperature: – 40 C
Mounting Style: Screw
Pd – Power Dissipation: 520 W
75A/1200V/IGBT/6U; IGBT Modules 1200V 75A 3-PHASE