#BSM10GD120DN2
Manufacturer: Infineon
Product Category: IGBT Modules
RoHS: No
Brand: Infineon Technologies
Product: IGBT Silicon Modules
Configuration: Hex
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.7 V
Continuous Collector Current at 25 C: 15 A
Gate-Emitter Leakage Current: 120 nA
Pd – Power Dissipation: 80 W
Package / Case: EconoPACK 2
Maximum Operating Temperature: + 150 C
Packaging: Bulk
Maximum Gate Emitter Voltage: +/- 20 V
Minimum Operating Temperature: – 40 C
Mounting Style: Screw
Factory Pack Quantity: 10