Infineon #FS300R12KE3
Manufacturer: Infineon
RoHS: YES
Product: IGBT Silicon Modules
Configuration: Hex
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 1.7 V
Continuous Collector Current at 25 C: 500 A
Gate-Emitter Leakage Current: 400 nA
Maximum Operating Temperature: + 125 C
Package / Case: EconoPACK+
Packaging: Tray
Maximum Gate Emitter Voltage: +/- 20 V
Minimum Operating Temperature: – 40 C
Mounting Style: Screw
Pd – Power Dissipation: 1450 W
IGBT Modules 1200V 300A 3-PHASE; 6IGBT: 300A1200V