Infineon #BSM25GD120DN2E New Instock

BSM25GD120DN2E BSM25GD120DN2E BSM25GD120DN2E BSM25GD120DN2E

Sell BSM25GD120DN2E, #Infineon #BSM25GD120DN2E New Stock, Infineon IGBT Power Module 1200V 35A, #IGBT_Module, #IGBT, #BSM25GD120DN2E
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Infineon #BSM25GD120DN2E Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :35A
Collector current Icp 1ms Tc=25°C :70A
Collector power dissipation Pc:2080W
Isolation Voltage VIsol (AC 1 minute) :200V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
DIN humidity category, DIN 40 040 F sec
IEC climatic category, DIN IEC 68-1 40 / 125 / 56

 

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