Mitsubishi #QM600HD-M New Instock
Mitsubishi QM600HD-M 600A/370V/GTR/1U QM600HD-M
• IC Collector current …………………… 600A
• VCEX Collector-emitter voltage ……….. 350V
• hFE DC current gain……………………….. 500
• Non-Insulated Type
Options
.also available with powerfull chopper. For characteristics please refer to Inverter IGBT
1)Theatsink=25°C, unless otherwise specified
2)CAL=Controlled Axial Lifetime Technology(soft and fast recovery)
.For diagrams of the Chopper IGBT please fefer to SKiiP30NAB12T10
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:350V
Gate-Emitter voltage VGES:±20V
Collector current Ic:600A
Collector power dissipation Pc:2080W
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mitsubishi QM600HD-M 600A/370V/GTR/1U
• IC Collector current …………………… 600A
• VCEX Collector-emitter voltage ……….. 350V
• hFE DC current gain……………………….. 500
• Non-Insulated Type
Options
.also available with powerfull chopper. For characteristics please refer to Inverter IGBT
1)Theatsink=25°C, unless otherwise specified
2)CAL=Controlled Axial Lifetime Technology(soft and fast recovery)
.For diagrams of the Chopper IGBT please fefer to SKiiP30NAB12T10
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:350V
Gate-Emitter voltage VGES:±20V
Collector current Ic:600A
Collector power dissipation Pc:2080W
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mitsubishi QM600HD-M 600A/370V/GTR/1U
YouTube : https://www.youtube.com/watch?v=Jk1KjYDgyCs
QM600HD-M QM600HD-M